Model/Brand/Package
Category/Description
Inventory
Price
Data
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Category: IGBTtransistorDescription: IGBT，Fairchild Semiconductor ### IGBT Discrete components and modules, Fairchild Semiconductor insulated gate bipolar transistor or IGBT is a three terminal power semiconductor device known for its high efficiency and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.6799 -
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Category: IGBTtransistorDescription: 600V ，Switching Power Supply Series N-channel IGBT and Anti Parallel Diode Ultra High Speed 600V, SMPS Series N-channel IGBT with Anti Parallel Superfast Diode2891 -
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Category: IGBTtransistorDescription: IGBT、1000V Above all, Fairchild Semiconductor # # IGBT discrete components and modules, Fairchild Semiconductor insulated gate bipolar transistor or IGBT is a three terminal power semiconductor device known for its high efficiency and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.3606 -
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Category: IGBTtransistorDescription: Overview of Front End Rectifiers for Smart Power Modules General Description2997 -
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Category: IGBTtransistorDescription: FAIRCHILD SEMICONDUCTOR FPF1C2P5MF07AM Transistor, IGBT/Field Effect Transistor, MOSFET, IPM, 231W, 39A, 620V2969 -
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Category: IGBTtransistorDescription: SPM®（智能电源模块），SPM45、SPM45L 系列，Fairchild Semiconductor ### 电动机控制器和驱动器，Fairchild Semiconductor7727 -
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Category: IGBTtransistorDescription: FAIRCHILD SEMICONDUCTOR ISL9V3040S3ST 单晶体管, IGBT, 21 A, 1.25 V, 150 W, 400 V, TO-263AB, 3 引脚8553 -
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Category: IGBTtransistorDescription: FAIRCHILD SEMICONDUCTOR ISL9V5036S3ST 单晶体管, IGBT, 46 A, 1.17 V, 250 W, 360 V, TO-263AB, 3 引脚4137 -
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Category: IGBTtransistorDescription: FAIRCHILD SEMICONDUCTOR HGTG18N120BND 单晶体管, IGBT, 通用, 54 A, 2.7 V, 390 W, 1.2 kV, TO-247, 3 引脚4023 -
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Category: IGBTtransistorDescription: FAIRCHILD SEMICONDUCTOR SGF5N150UFTU IGBT Single Transistor, 10A, 1.5kV, 62.5W, 1.5kV, SOIC, 3Pins2461 -
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Category: IGBTtransistorDescription: FAIRCHILD SEMICONDUCTOR HGTG30N60C3D 单晶体管, IGBT, 63 A, 1.8 V, 208 W, 600 V, TO-247, 3 引脚7983 -
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Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 1.2kV 80A 3Pin(3+Tab) Power TO-247 T/R2804 -
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Category: IGBTtransistorDescription: IGBT 分立，Fairchild Semiconductor ### IGBT 分立件和模块，Fairchild Semiconductor 绝缘栅级双极性晶体管或 IGBT 是一种三端子功率半导体设备，以高效和快速切换著称。 IGBT 通过将用于控制输入的隔离栅极 FET 和用作开关的双极性功率晶体管组合在单个设备中，将 MOSFET 的简单栅极驱动特性与双极性晶体管的高电流和低饱和电压能力组合在一起。2276 -
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Category: IGBTtransistorDescription: IGBT 分立，Fairchild Semiconductor ### IGBT 分立件和模块，Fairchild Semiconductor 绝缘栅级双极性晶体管或 IGBT 是一种三端子功率半导体设备，以高效和快速切换著称。 IGBT 通过将用于控制输入的隔离栅极 FET 和用作开关的双极性功率晶体管组合在单个设备中，将 MOSFET 的简单栅极驱动特性与双极性晶体管的高电流和低饱和电压能力组合在一起。3879 -
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Category: IGBTtransistorDescription: FAIRCHILD SEMICONDUCTOR FGH40N60SMD 单晶体管, IGBT, 80 A, 1.9 V, 349 W, 600 V, TO-247AB, 3 引脚1110 -
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Category: IGBTtransistorDescription: IGBT 分立，Fairchild Semiconductor ### IGBT 分立件和模块，Fairchild Semiconductor 绝缘栅级双极性晶体管或 IGBT 是一种三端子功率半导体设备，以高效和快速切换著称。 IGBT 通过将用于控制输入的隔离栅极 FET 和用作开关的双极性功率晶体管组合在单个设备中，将 MOSFET 的简单栅极驱动特性与双极性晶体管的高电流和低饱和电压能力组合在一起。9433 -
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Category: IGBTtransistorDescription: IGBT 分立，Fairchild Semiconductor ### IGBT 分立件和模块，Fairchild Semiconductor 绝缘栅级双极性晶体管或 IGBT 是一种三端子功率半导体设备，以高效和快速切换著称。 IGBT 通过将用于控制输入的隔离栅极 FET 和用作开关的双极性功率晶体管组合在单个设备中，将 MOSFET 的简单栅极驱动特性与双极性晶体管的高电流和低饱和电压能力组合在一起。5078 -
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Category: IGBTtransistorDescription: IGBT 分立，Fairchild Semiconductor ### IGBT 分立件和模块，Fairchild Semiconductor 绝缘栅级双极性晶体管或 IGBT 是一种三端子功率半导体设备，以高效和快速切换著称。 IGBT 通过将用于控制输入的隔离栅极 FET 和用作开关的双极性功率晶体管组合在单个设备中，将 MOSFET 的简单栅极驱动特性与双极性晶体管的高电流和低饱和电压能力组合在一起。9935 -
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Category: IGBTtransistorDescription: 600V ，开关电源II系列N沟道IGBT与反并联二极管StealthTM 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode6222 -
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Category: IGBTtransistorDescription: EcoSPARKTM 300mJ ， 360V ， N沟道IGBT点火 EcoSPARKTM 300mJ, 360V, N-Channel Ignition IGBT6761 -
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Category: IGBTtransistorDescription: EcoSPARKTM 300mJ ， 400V ， N沟道IGBT点火 EcoSPARKTM 300mJ, 400V, N-Channel Ignition IGBT6420 -
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Category: IGBTtransistorDescription: EcoSPARKTM 500mJ ， 360V ， N沟道IGBT点火 EcoSPARKTM 500mJ, 360V, N-Channel Ignition IGBT1270
